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BEN10M-TFR Product Details

Part Number
BEN10M-TFR
High accuracy sensing up to 0.2mm object
Manufacturer: Autonics
Technical Specification

Sensing type
Through-beam Retroreflective (Standard type) Retroreflective (Built-in polarizing filter) Diffuse reflective
Sensing target
Opaque materials of Min. 16mm Opaque materials of Min. 60mm Translucent, Opaque materials
Response time
Max. 20ms
Power consumption
Max. 4VA
Sensitivity adjustment
- Adjustment VR
Control output
Relay contact output Relay contact capacity: 30VDC 3A of resistive load, 250VAC 3A resistive load Relay contact composition: 1c
Light receiving element
Photo IC
Insulation resistance
Min. 20M(at 500VDC megger)
Noise resistance
1,000V the square wave noise(pulse width : 1) by the noise simulator
Mechanical
1.5mm amplitude or 300m/s2 at frequency of 10 to 55Hz(for 1 min.) in each of X, Y, Z directions for 2 hours
Sensing distance
10m 0.1 to 5m 1 0.1 to 3m 1 300mm 2
Hysteresis
- Max. 20% at ratedsetting distance
Response time
24-240VAC 10% 50/60Hz, 24-240VDC 10%(Ripple P-P : Max. 10%)
Light source
Infrared LED(850nm) Red LED(660nm) Infrared LED(940nm)
Operation mode
Selectable Light ON or Dark ON by VR
Relay lifetime
Mechanically: Min. 50,000,000 operation, Electrically: Min. 100,000 operation
Indicator
Operation indicator: red, Stability indicator: green (The red lamp on Emitter of transmitted beam type is for power indication)
nsulation type
Double or strong insulation (Mark :, Dielectric voltage between the measured input and the power: 1kV)
Dielectric strength
1000VAC 50/60Hz for 1 minute
Malfunction
1.5mm amplitude or 300m/s2 at frequency of 10 to 55Hz(for 1 min.) in each of X, Y, Z directions for 10 minutes

BEN10M-TFR Description


Autonics introduces BJN series - Micro spot photoelectric sensors sensing objects up to 0.2mm with high accuracy using aspherical optic. The series allows more diverse choices for compact and high function photoelectric sensors with existing BJ, BJG and BJN series.

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